^zmi-dondilctoi ^ptodacti, one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 IRF440/441/442/443 n-channel power mosfets features low boston) at high voltage improved inductive ruggedness excellent high voltage stability fast switching times rugged polyslllcon gate cell structure low input capacitance extended safe operating area improved high temperature reliability to-3 package (high voltage) product summary part number ihf440 irf441 irf442 irf443 vds 500v 450v 500v 450v boston) 0.85 q 0.850 1.100 1.100 id 8.0a 8.0'a 7,oa 7.0a to-3 maximum ratings characteristic drain-source voltage (1) drain-gate voltage (ros=1.0mfl)(1) gate-source voltage continuous drain current tc=25c continuous drain current tc=100c drain current? pulsed (3) gate current? pulsed total power dissipation @ tc=25c derate above 2sc operating and storage junction temperature range maximum lead temp, for soldering purposes, 1/8" from case for 5 seconds symbol vdss vdqr vqs id b idm igm pd tj, tfitq tu IRF440 500 600 irf441 450 460 irf442 500 500 irf443 480 450 20 8.0 5.0 32 8.0 5.0 32 7.0 4.0 28 7.0 4.0 28 1.5 125 1.0 -55 to 150 300 unit vdc vdc vdo adc adc ado adc watts w/?c c ?c notes: (1) tj=26c to 150?c (2) pulse test: pulse widlhooops, duty cycle<2% (3) repetitive rating: pulse width limited by max. junction temperature nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
IRF440/441/442/443 n-channel power mosfets electrical characteristics (tc=25c unless otherwise $pecinad) chjnclarlitlc drain-source breakdown voltage gate threshold voltage gate-source leakage forward gate-source leakage reverse zero gate voltage drain current on-state drain-source current (2) static drain-source on-state resistance (2) forward transconductance (2) input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time . turn-oft delay time fall time total gate charge (gate-source plus gate-drain) gate-source charge gate-drain ("miller") charge symbol bvoss vosfth) loss fess loss loftxil rds(oii( 8(6 ci? cqss c? td|on) ir tdlow tl q0 q8s 0* type IRF440 irf442 irf441 irf443 all all all all IRF440 irf441 irf442 irf443 IRF440 irf441 irf442 irf443 all all all all all all all all all all all mln 500 450 2.0 - _ -. ? 8.0 7.0 - - 4.0 - ? - - ? - - _ ? - typ - - - - - - ? - - 0.6 1.0 6.5 1200 230 65 ? ? _ ? 34 6.0 28 max - - 4.0 100 -100 2so 1000 ' - - 0.85 1.1 _ 1600 360 150 35 15 90 30 60 ? - unit* v v v na na na ma a a 0 0 0 pf pf pf ns ns ns ns nc nc nc test conditions vos-ov b"250|ia . vds-vqs. id=250)m vos-20v vos=-20v vos-max. rating. vqs-ov vos-max. ratingxo.8, v6s=ov, tc=125c vds^dtonlxrdswitm,., vos=10v ves=10v, lo=4.0a vds>blgn)xrds(on| max., lo=4.0a . ves=ov, vds=25v, f-1.0mhz vdd=0.5bv[)ss, b=4.0a. zo=4.7q [mosfet switching times are essentially independent of operating temperature.) vbs-10v, b=10a, vds=0.8 max. rating (gate charge is essentially independent of operating temperature.) thermal resistance junction to case case-to-sink junction-to- ambient riwc rmcs rlhja all all all - - - ? 0.1 - 1.0 - 30 k/w k/w k/w mounting surface flat, smooth, and greased free air operation notes: (1) ^.-25=0 to 150"c (2) pulse test: pulse widlh<300j*s, duty cycles;2% (3) repetitive rating: pulse width limited by max. junction temperature
IRF440/441/442/443 n-channel power mosfets source-drain diode ratings and characteristics characteristic continuous source current (body diode) , pulse source current (body diode) (3) diode forward voltage (2) reverse recovery time ? symbol is ism vsd trr type irf44.0 irf441 irf442 irf443 IRF440 irf441 irf442 irf443 IRF440 irf441 irf442 irf443 all mln - '- - - - - - typ - - - - - _ 1100 max 8.0 7.0 32 28 2.0 1.9 - units a a a a v v ns ta?t conditions modified mosfet symbol , showing the integral fii reverse p-n junction rectifier ^g"hj irs tc=25c. is=8.0a, vgs=ov tc=25c, is=7.0a, vos=ov tj = 150?c, lf=8.0a, d!f/dt=looa/ms notes: (1) tj-25-c to 150c (2) pulse test: pulse widthssoo/js, duty cycla<2% (3) repetitive rating: pulse width limited by max. junction temperature 20 40 60 60 100 vos. drain-to-source voltaoz (volts) typical output characteristics vos, oate-to-source voltage (volts) typical transfer characteristics ^ipuba t?1 0 2 4 6 ? fl 10 vgs, dbain-to-5ource voltage (volts) ' typical saturation charactarkllcs 6 2 10 2 1.0 6 01 ? ifu 440.1- - - *~ flptaw'" iii ? irf 442.3 ? ? / / / as'c ? tj-i60*<{ fw-iow sinolfpuu 1 " 7~ t ^ a, w < i*--' *>? \ ?' ? r ^. v , ^ \ , n \ \\ \> ?$ rn ?sr 1 i irf 441 3~ ff 440 2-. m fff '.?ft* 4 tm* flf ii dc 1.0 2 fi 10 20 60 100 20o 6oo vd,, drain-to-source voltaoe (volts) maximum s?la operating ana
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